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| FMB150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI FMB150 is Designed for PACKAGE STYLE .500 4L FLG .112x45 A FULL R O.125 NOM. L FEATURES: * * * OmnigoldTM Metalization System C B MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG JC O E H D G F K IJ 16 A 60 V 25 V 60 V 4.0 V 230 W @ TC = 25 C -65 C to +200 C -65 OC to +150 OC 1.1 OC/W O O DIM A B C D E F G H I J K L .980 / 24.89 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .245 / 6.22 .720 / 18.28 .125 / 3.18 MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .125 / 3.18 .230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 1.050 / 26.67 ORDER CODE: ASI10588 O CHARACTERISTICS SYMBOL BVCBO BVCER BVCEO BVEBO hFE COB PG C TC = 25 C NONETEST CONDITIONS IC = 100 mA IC = 100 mA IC = 100 mA IE = 20 mA VCE = 5.0 V VCB = 28 V VCC = 28 V POUT = 150 W IC = 1.0 A f = 1.0 MHz f = 108 MHz RBE = 10 MINIMUM TYPICAL MAXIMUM 60 55 25 4.0 20 150 140 9.0 65 UNITS V V V V --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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